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Schmid, M. ; Howgate, J. ; Rühm, W. ; Thalhammer, S.*

High mobility AlGaN/GaN devices for β--dosimetry.

Nucl. Instrum. Methods Phys. Res. Sect. A 819, 14-19 (2016)
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Open Access Green möglich sobald Postprint bei der ZB eingereicht worden ist.
There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β--emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β--particle interactions with a metallic surface covering. We demonstrate that the source-drain current is modulated in dependence on the kinetic energy of the incident β--particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β--dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.
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Publikationstyp Artikel: Journalartikel
Dokumenttyp Wissenschaftlicher Artikel
Schlagwörter Gan ; Monte Carlo Simulations ; Radiation Detectors ; β-emitters; Persistent Photoconductivity; Algan/gan Heterostructure; Gallium Nitride; Radiation; Gan; Dosimetry; Brachytherapy; Detectors; Hfets
ISSN (print) / ISBN 0168-9002
e-ISSN 1872-9576
Quellenangaben Band: 819, Heft: , Seiten: 14-19 Artikelnummer: , Supplement: ,
Verlag Elsevier
Verlagsort Amsterdam
Begutachtungsstatus Peer reviewed